On the Shockley-Read-Hall Model: Generation-Recombination in Semiconductors
نویسندگان
چکیده
The Shockley-Read-Hall model for generation-recombination of electron-hole pairs in semiconductors based on a quasistationary approximation for electrons in a trapped state is generalized to distributed trapped states in the forbidden band and to kinetic transport models for electrons and holes. The quasistationary limit is rigorously justified both for the drift-diffusion and for the kinetic model.
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عنوان ژورنال:
- SIAM Journal of Applied Mathematics
دوره 67 شماره
صفحات -
تاریخ انتشار 2007